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|Section2= |Section3= |Section7= |Section8= }} Indium nitride () is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.〔T. D. Veal, C. F. McConville, and W. J. Schaff (Eds), Indium Nitride and Related Alloys (CRC Press, 2009)〕 The bandgap of InN has now been established as ~0.7 eV depending on temperature (the obsolete value is 1.97 eV). The effective electron mass has been recently determined by high magnetic field measurements , m *=0.055 m0. Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV). Currently there is research into developing solar cells using the nitride based semiconductors. Using the alloy indium gallium nitride (InGaN), an optical match to the solar spectrum is obtained. The bandgap of InN allows a wavelengths as long as 1900 nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality. p-type doping of InN and indium-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (GaN, AlN) has proved to be difficult. Thin polycrystalline films of indium nitride can be highly conductive and even superconductive at helium temperatures. The superconducting transition temperature Tc depends on the film structure and is below 4 K.〔 The superconductivity persists under high magnetic field (few teslas) that differs from superconductivity in In metal which is quenched by fields of only 0.03 tesla. Nevertheless, the superconductivity is attributed to metallic indium chains or nanoclusters, where the small size increases the critical magnetic field according to the Ginzburg–Landau theory. ==See also== *Indium(III) oxide 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Indium nitride」の詳細全文を読む スポンサード リンク
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